Precision Heating for Semiconductor Wafers

Precision Heating for Semiconductor Wafers

The EMS 1200 Precision Hot Plate, an extension of the EMS 1000 model, maintains identical specifications and options while enhancing performance with a slightly higher achievable ramp rate of 30°C/min powered by 2kW heating elements, surpassing the 960W in the EMS 1000. The larger 250 x 250mm top plate offers enhanced versatility for small batch processing, with customizable options including substrate dimensions, vacuum hole positions, and Lift Pin capability.